High-performance Parallel Tandem MoTe2/perovskite Hnub Ci Cell Raws li Txo Graphene Oxide Raws li Qhov Chaw Thauj Khoom

Organic-inorganic hlau hybrid perovskites tau tsis tu ncua arousing extraordinary kev tshawb fawb txaus siab nyob rau hauv lub photovoltaic zej zog tshuav rau lawv exceptional semiconductor zog xws liyooj yim fabrication txheej txheem,ntev diffusion ntev1, ntev tus neeg nqa khoom lub neej2, panchromatic absorption ntawm lub teeb3, thiab lwm yam Txog niaj hnub no, qhov siab tshaj plaws kev hloov pauv hluav taws xob (PCE) ua tiav nyob rau hauv ib qho kev sib tshuam perovskite hnub ci hlwb (PSCs) tau siab li 25.5 feem pua.1. Yog li txhawm rau txhim kho PCE ntxiv los ntawm Shockley-Queisser (SQ) txwv, qee cov tswv yim sib txawv tau ua raws, uas yog, cov cab kuj sib npaug los sau cov zog ntxiv (hυ-Eg) ntawm photons nrog lub zog loj dua bandgap (xws li)4 thiab multijunction absorbers los sau photons nrog lub zog me dua Eg5. Txawm hais tias nws tseem yog qhov ua tsis tau zoo thiab tsis yooj yim kom tau txais PCE los ntawm kev sib koom ua ke ntawm cov khoom sib txuas, ntau qhov sib txuas (tandem) PSCs tau ua tiav PCE loj li 29.15 feem pua.6. Txawm li cas los xij, kev tshoov siab los ntawm kev ua tiav ntawm cov neeg sib tw ntawm tandem PSCs, GaAs thiab GaInP-based multijunction solar cells uas tau mus txog qhov siab tshaj plaws PCE ntawm 38.8 feem pua.7, tseem muaj ibburgeoning txaus siab rau kev txhim kho ntxiv ntawm multijunction PSC kev ua tau zoo. Qhov no tau txhawb kev tshawb nrhiavcov ntaub ntawv tshiab thiab architectures rau multijunction PSCs. 

Nyem qhov no Kom Paub Cistanche Anti-Oxidation Properties

Semiconducting hloov pauv hlau dichalcogenides (TMDs), suav nrog MoS2, MoSe2, MoTe2, WS2, thiab WSe2, tab tom tawm los ua qhov zoo nkauj absorbers rau lub hnub ci hlwb vim lawv cov ultrahigh absorption coefcients8, mechanical fexibility9, high carrier mobility10, ua ke nrog rau ib qho zoo tagnrho bandap. siv 8. Qhov tseem ceeb, TMD txheej thinner dua 20 nm muaj peev xwm nqus tau lub teeb txawm tias kaum npaug loj dua qhov paub zoo ntawm bandgap semiconductors8. Thaum TMDs, tshwj xeeb tshaj yog MoS2, tau siv dav ua cov txheej txheem thauj khoom thauj (HTLs) hauv PSCs11,12, tsis muaj ntawv tshaj tawm txog kev tau txais txiaj ntsig los ntawm TMDs nqus peev xwm txhawm rau txhim kho lub teeb pom kev zoo hauv PSCs. Txawm hais tias feem ntau TMDs yuav luag tib qhov bandgap loj li perovskites, bulk MoTe2 nrog bandgap ntawm ib ncig ntawm 1 eV yuav yog cov khoom siv ntxiv rau perovskite los sau cov ze-infrared (NIR) ntawm hnub ci. Qhov muaj peev xwm nqus tau NIR muaj zog ntawm MoTe2, nrog rau qhov tsis muaj dangling bonds ntawm nws qhov chaw, cov cuab yeej ntawm TMDs uas yog los ntawm lawv cov tsis muaj zog van der Waals (vdW) interlayer kev sib cuam tshuam, underpin MoTe2 aa tus neeg sib tw tsim nyog los ua hetero nrog cov ntaub ntawv perovskite. rau tandem solar cells13,14. Kev sim, cov tshuaj raug nqi zoo thiab cov txheej txheem exfoliation muaj pub rau cov khoom sib xws thiab homogeneous nyias MoTe2 zaj duab xis npaj15,16. Yog li, nws yuav muaj txiaj ntsig ntau dua los tshawb nrhiav kev siv cov ntaub ntawv MoTe2 ua cov txheej txheem txhawb nqa, kom tau txais txiaj ntsig los ntawm MoTe2 nqus.

Ntawm no, peb suav nrog thiab nthuav tawm ib hom Planar ntawm qhov sib npaug sib npaug PSCs nrog thaj tsam absorbing ua los ntawm nyias MoTe2 thiab CH3NH3PbI3. Cov cuab yeej tseem ceeb yog tsim los ntawm ITO/TiO2/CH3NH3PbI3/MoTe2/ Spiro-OMeTAD/Ag txheej, ib qho kev teeb tsa uas tau tsim los nrog MoS2 16. Qhov kev xav tau zoo ntawm kev sib raug zoo ntawm MoTe2 nrog rau lwm cov khaubncaws sab nraud povtseg, nrog rau nws lub peev xwm nqus NIR siab, zoo kawg nkaus paving txoj hauv kev kom ua tau zoo dua photovoltaic efficiency. Los ntawm kev sib piv rau ib qho kev sib tshuam PSCs, cov khoom siv tau npaj siab tau nce hauv PCE los ntawm 14.01 txog 18.52 feem pua. Los ntawm kev ua cov lej txheeb xyuas qhov tseeb ntawm MoTe2 thickness-dependent ntaus ntawv kev ua tau zoo, qhov zoo tshaj plaws thickness ntawm 25 nm tau txais, uas yog ntau qhov kev txiav txim ntawm amplitude thinner dua li yav dhau los kev txhawb nqa absorbing txheej kom deb li deb tau tshaj tawm nyob rau hauv multijunction PSCs17.

Txawm li cas los xij, nws yog qhov tseeb tsim tau zoo tias kev siv cov khoom siv hluav taws xob tsawg tsawg yog qhov cuam tshuam rau qhov qhib hluav taws xob hluav taws xob (VOC) ntawm lub hnub ci vim muaj qhov txwv electron thiab qhov sib cais quasi-fermi theem. Ib yam li ntawd, peb tau pom qhov txo qis hauv Voc afer tig cov qauv rau hauv cov khoom siv sib txuas. Txhawm rau kom them nyiaj rau cov kev poob qis no, peb hloov daim ntawv txo qis graphene oxide (rGO) nrog Spiro-OMETAD ua HTL los txhim kho lub qhov tshem tawm thiab kev thauj mus los. Outstandingly, daim ntawv rGO txhim kho cov cuab yeej VOC thiab PCE mus txog rau 0.928 thiab 20.32 feem pua, feem. Nws yog ib qho tseem ceeb uas qhov kev ua tau zoo ntawm rGO txheej yog ob qho tib si interlayer thiab them nqi thauj txheej tau raug pov thawj zoo hauv PSCs18-23.

Basic sib npaug thiab qauv

Hauv kev ua haujlwm no, peb ntiav cov qauv kho qhov muag thiab hluav taws xob hybrid los xam thiab ntsuas cov qauv uas tau nthuav tawm. Peb nthuav qhia lawv cov qauv tsim ib txwm muaj (piv txwv li, nyob rau hauv qhov chaw zaus) thiab tom qab ntawd tham txog qhov txuas ntxiv mus rau lub sijhawm sau npe. Ib txoj kev finite element method (FEM) yog siv los daws qhov sib npaug ntawm qhov sib txawv (PDEs).

Optical qauv.

Daim duab 1A qhia txog daim duab schematic ntawm peb cov phiaj xwm PSC yooj yim. Los ntawm sab saum toj mus rau hauv qab, cov qauv yog stacked los ntawm pob tshab indium tinoxide(ITO) electrode, compact titaniumdioxide(TiO2) txheej, methylammonium lead iodide perovskite (CH3NH3PBI3) zaj duab xis, N, N-di (4-methoxyphenyl) amino]-9, 9′-spirobifuorene (spiro-OMeTAD) txheej, thiab a nyiaj (Ag) rear electrode. Lub teeb teeb meem nkag mus rau hauv lub cell los ntawm ITO txheej thiab yog absorbed los ntawm perovskite zaj duab xis rau qee qhov. Tsis tas li ntawd, lub teeb tawm tuaj ntsib ntau qhov kev cuam tshuam vim yog lub nraub qaum Ag reflector uas ua rau muaj kev nqus ntxiv. Rau kom muaj nuj nqis, kev sib cuam tshuam ntawm electromagnetic nthwv dej thiab cov khaubncaws sab nraud povtseg, nrog rau cov hluav taws xob (E) faib, Helmholtz kab zauv (xws li hauv qab no) tau daws:

ntawm tus qauv. Gopt formula yog raws li nram no,

Qhov twg ℏ yog qhov txo Planck tas li, thiab ε" yog qhov kev xav ntawm qhov txheeb ze permittivity. Raws li cov qauv qhia pom tseeb, Gopt yog proportional rau lub square ntawm E siv nyob rau hauv ib co wavelength. Te tag nrho tiam tus nqi (Gtot) yuav ua tau. xam los ntawm kev sib koom ua ke Gopt tshaj qhov xwm txheej lub teeb wavelength bandwidth.

Cov qauv hluav taws xob. Cov nram qab no paub zoo J-V kev sib raug zoo yog siv los piav txog cov yam ntxwv hluav taws xob ntawm PSCs tam sim no:

kev txiav txim los xam cov dej ntws, cov nram qab no Poisson thiab continuity sib npaug yuav tsum tau daws nyob rau hauv lub ntaus ntawv:

Cov txiaj ntsig thiab kev sib tham

Raws li tau hais ua ntej, kev siv PSC yog ua los ntawm ITO, TiO2, CH3NH3PBI3, spiro-OMeTAD, Ag txheej, raws li pom hauv daim duab 1a. Te ITO, TiO2, CH3NH3PBI3, spiro-OMeTAD, thiab Ag txheej ua raws li lub hauv ntej pob tshab electrode, electron thauj txheej (ETL), absorbing txheej, lub qhov thauj txheej (HTL), thiab rov qab electrode, feem. Thoob plaws hauv phau ntawv no, lub thickness ntawm ITO, TiO2, CH3NH3PBI3, spiro-OMeTAD, thiab Ag txheej yog tsau ntawm 50, 90, 200, 100, thiab 100 nm, feem. Daim duab 1b nthuav tawm cov duab kos lub zog ntawm cov khoom hauv cov qauv, pom zoo ib qho kev sib haum xeeb zoo rau cov khoom siv hluav taws xob thiab qhov hloov mus thoob plaws lub cuab yeej. Hais lus nruj me ntsis, qhov loj tshaj plaws valence band ntawm kev teeb tsa ntawm perovskite (−5.48 eV) thiab ETL (−7.45 eV) ua haujlwm zoo thaiv qhov kev txhaj tshuaj, thaum lawv cov band conduction zoo sib xws rau kev sau cov electrons zoo siab hauv zaj duab xis perovskite. Conversely, band alignment ntawm CH3NH3PBI3 (−3.93 eV) thiab Spiro-OMeTAD (− 1.95 eV) ua kom txaus lub qhov hloov mus rau hauv lub valence band, thaum nws impedes lub electron hloov nyob rau hauv lub conduction band. Cov input parameters, qhov tseem ceeb ntawm lub zog band sib txawv (xws li), thiab electron affinity (χ) ntawm tag nrho cov Cheebtsam raug xaiv raws li cov ntaub ntawv 17,24,25, thiab lawv cov nuj nqis yog indexed rau lub nqus tsev vacuum. Qhov nkhaus dub ntawm daim duab 1c qhia txog qhov nqus tag nrho hauv kev siv PSC. Cov ntaub ntawv refractive index ntawm TiO2, CH3NH3PBI3, thiab

spiro-OMETAD yog muab los ntawm cov ntaub ntawv 26–28. Qhov xiav-shaded cheeb tsam ntawm daim duab 1c manifests lub absorption spectra ntawm PSK nyob rau hauv cov qauv. Nws yog qhov tseeb tias txheej perovskite tsuas tuaj yeem nqus hnub ci tshaj 300-800 nm vim nws qhov bandgap (1.55 eV), yog li tag nrho NIR lub teeb yog nkim. Txhawm rau thawb lub teeb pom kev dhau qhov pom pom, txheej txheej ultrathin MoTe2 muab tso rau hauv qab ntawm perovskite zaj duab xis. MoTe2 semiconductor feem ntau tau txais txiaj ntsig nrog ib qho me me indirect bandgap ntawm txog 1.0 eV29 muaj peev xwm txuas ntxiv lub teeb nqus mus rau wavelengths mus txog 1200 nm, raws li tau qhia los ntawm thaj tsam liab ntxoov ntxoo ntawm daim duab 1c. Dhau li ntawm qhov tsis ncaj qha bandgap, feem ntau MoTe2 nyiam ob qhov tseem ceeb ncaj qha excitonic qhov khoob, hu ua A thiab B, nyob ib ncig ntawm 1.2 thiab 1.5 eV, raws li 30,31, uas qhia meej nws qhov siab nqus, raws li tau tshwm sim hauv daim duab 1c. Tom qab ntawd, qhov nkhaus dub hauv daim duab 1d qhia tag nrho Gopt hauv lub cuab yeej. Nws lees paub tias lub teeb pom kev zoo tau coj mus rau cov neeg nqa khoom tsim los ntawm NIR ntau yam. Cov cheeb tsam xiav thiab paj yeeb ntxoov ntxoo ntawm daim duab 1d nthuav tawm kev koom tes ntawm PSK thiab MoTe2 txheej, raws li, rau tag nrho Gopt. Raws li qhov ntau, PSK thiab MoTe2 cov khaubncaws sab nraud povtseg muaj txog 61 feem pua ​​​​thiab 39 feem pua ​​​​ntawm cov neeg nqa khoom, feem. Qhov kev txhim kho cov kab ke no los ntawm MoTe2 txheej tuaj yeem cog lus rau kev txhim kho ntawm tes. Tsis tas li ntawd, MoTe2 txheej zoo li lwm cov ntaub ntawv TMD tuaj yeem ua lub luag haujlwm tseem ceeb hauv kev txhawb nqa cov cuab yeej ua haujlwm. Kev siv hluav taws xob ntawm TMDs hauv PSCs tau nthuav dav los pab txhawb nqa kev thauj mus los tau zoo32, ncua kev ruaj ntseg16, thiab lwm yam 33. Yog li, cov txiaj ntsig zoo no tau nrog lawv cov nqi qis thiab cov txheej txheem kev npaj yooj yim-txheej txheem exfoliation thiab hloov mus rau hauv ib lub cuab yeej, ua rau lawv cov txiaj ntsig zoo hauv PSK kev ua tau zoo.

Hauv qhov kev sim no, qhov ntsuas qhov ntsuas ntawm qhov ntau ntawm MoTe2 tau txais los ntawm Ref34. Tsis tas li ntawd, hauv txhua qhov kev suav, lub teeb pom kev zoo yog ua raws li AM1.5G spectrum. Lub wavelength bandwidth yog xaiv los ntawm 300 mus rau 1200 nm hauv kev daws teeb meem ntau npaum li 20 nm. Lub caij nyoog ciam teb (PBC) yog siv rau txhua sab ntawm thaj tsam insulating nyob rau hauv cov qauv thiab Au txheej sab yog teem rau ib tug zoo meej hluav taws xob conductor (PEC). Cov kev sib cuag hauv qab thiab sab saum toj yog suav tias yog qhov zoo tshaj plaws ohmic thiab Schottky nrog qhov nrawm nrawm ntawm 107 cm / s, feem. Tsis tas li ntawd, ib lub mesh swept yog siv los daws cov teb nyob ib ncig ntawm txheej nyias. Table 1 suav nrog tag nrho cov khoom siv kho qhov muag thiab hluav taws xob siv hauv kev simulations. Ntawm no, εr yog qhov dielectric tas li, NC thiab NV yog qhov ua tau zoo ntawm lub xeev ntawm kev coj ua thiab valence bands, μn thiab μp yog electron thiab qhov txav, χ yog electron affinity, Piv txwv li yog bandgap zog, NA thiab ND yog txais thiab pub dawb , thiab τn thiab τp yog electron thiab qhov lub neej, feem. Te MoTe2 cov ntaub ntawv paub tias yog P-doped35. Tsis tas li ntawd, nyob rau hauv qhov txwv ntau, cov semiconducting TMDs dais photogenerated carrier lifetimes mus txog ob peb nanoseconds36,37.

Tam sim no qhov ceev-voltage (J-V) cov yam ntxwv ntawm peb cov ntaub ntawv PSC nyob rau hauv ib lub hnub mob yog pom nyob rau hauv daim duab 2a. Te PSC qhia PCE ntawm 14.01 feem pua, nrog Jsc ntawm 15.20 mA/cm2, Voc ntawm 1.14 V, thiab FF ntawm 0.81. Qhov txiaj ntsig ntawm NIR lub teeb absorbed hauv MoTe2 txheej, Jsc considerably nce los ntawm 26.2 mA / cm2 nyob rau hauv lub multijunction PSC nrog optimized thickness ntawm MoTe2. Tab sis, Voc poob rau 0.84 V vim lub electron thiab qhov quasi-fermi theem sib cais tam sim no txwv los ntawm MoTe2 bandgap. Txawm li cas los xij, txawm tias Voc raug rhuav tshem tom qab tso cov txheej txheem MoTe2, qhov kev txhim kho ntawm Jsc yog qhov tseem ceeb tshaj qhov kev txo Voc, ua rau pom qhov nce hauv PCE los ntawm 14.01 feem pua ​​​​rau 18.52 feem pua. Tis PCE nce kuj yog pab los ntawm kev sib haum xeeb ntawm kev sib tw ntawm MoTe2 thiab perovskite txheej thiab HTL, raws li qhia hauv daim duab 2b. Qhov tseeb, qhov xav tau kev sib tw ua ke ntawm cov txheej txheej absorbing tuaj yeem txo Voc poob hauv multijunction PSCs los ntawm kev txhim kho kev thauj mus los thiab kev txo nqi recombination38. Txhawm rau muab qhov kev xav dav dav ntawm TMD lub peev xwm rau kev nqus lub teeb, peb sib piv qhov nqus spectrum ntawm cov qauv tam sim no nrog thaum MoTe2 txheej tau hloov los ntawm peb lwm TMDs, WSe2, MoSe2, thiab MoS2, raws li qhia hauv daim duab 2c. Te refractive index thiab band qauv tsis ntawm WSe2, MoSe2, thiab MoS2 yog tau los ntawm cov ntaub ntawv34,39–41. Thaum tag nrho cov TMDs qhia lub teeb pom kev zoo hauv kev sib cuam tshuam hauv lub teeb pom kev zoo, lawv cov bandgaps npog ntau yam ntawm 1-2 eV42. Ntawm no, WSe2 thiab MoSe2 nrog bandgap ntawm ib ncig ntawm 1.3 eV tuaj yeem nqus tau qhov dav ntawm lub teeb piv rau MoS2 nrog bandgap ntawm 1.45 eV. Ntawm cov no, MoTe2 kom meej meej muaj peev xwm nqus tau NIR lub teeb, ua rau nws qhov kev xaiv zoo tshaj plaws los ua cascaded nrog PSK. Daim duab 2d, e qhia txog kev sib cuam tshuam ntawm lub teeb hluav taws xob thiab cov txheej txheem sib txawv ntawm lub wavelength ntawm 600 thiab 1000 nm. Ib qho tuaj yeem pom tias MoTe2 txheej cuam tshuam nrog lub teeb thaum lub wavelength teem rau 1000 nm, thaum nws qhov kev pab cuam rau lub teeb nqus nyob rau hauv qhov pom wavelength ntawm 600 nm yog negligible. Nws tseem tsim nyog paub tias kev siv TMDs hauv PSCs tau pom cov txiaj ntsig tau zoo los txhim kho kev ruaj ntseg16,43. Ntawm qhov tod tes, TMDs hauv txhua qhov tuab tuaj yeem npaj tau yooj yim los ntawm ib puag ncig-insensitive thiab tsis muaj kev puas tsuaj xws li qhuav lossis kua-theem exfoliation16, tom qab ntawd hloov los ntawm txoj kev qhuav lossis ntub dej. Yog li, kev sib xyaw ntawm PSK cov ntaub ntawv thiab TMDs tuaj yeem txhim kho PSC kev ua tau zoo, tsis yog hauv kev ua haujlwm photovoltaic nkaus xwb tab sis kuj tsis ruaj khov.

Txhawm rau ua tiav qhov kev ua tau zoo ntawm ntau qhov PSC ncov, kev soj ntsuam ntawm kev ua haujlwm ntawm tes nyob ntawm MoTe2 tuab tau ua tiav, thaum lwm qhov kev nkag tsis tau hauv Table 1 yog sab laug tsis hloov pauv. Raws li daim duab 3, qhov nqus, cov khoom thauj khoom, thiab cov khoom siv hluav taws xob photovoltaic ntawm lub cell hloov raws li MoTe2 thickness nce ntawm 5 mus rau 100 nm. Daim duab 3a nthuav tawm qhov nqus spectra ntawm plaub qhov sib txawv ntawm cov txheej txheem MoTe2 nyob rau hauv multijunction PSC. Raws li qhov xav tau, qhov tuab ntawm MoTe2 txheej, qhov nqus nqus ntau dua hauv MoTe2 txheej. Txawm li cas los xij, tus nqi nqus lub teeb yuav qeeb qeeb thaum MoTe2 thickness nce, kom txog rau thaum nws ncav cuag saturation ntawm tej thickness. Txawm hais tias lub teeb ntau dhau yog absorbed los ntawm MoTe2 ntawm qhov ntev wavelengths nyob ib ncig ntawm 1100 nm, cov cab kuj tiam neeg tsis zoo ntawm xws li wavelengths, raws li illustrated nyob rau hauv daim duab 3b. Qhov no tuaj yeem raug sau tseg rau cov nyhuv resonant kab noj hniav thiab kev cuam tshuam uas ua lub luag haujlwm hauv kev nqus spectra, tab sis tsis txhob cuam tshuam rau cov neeg nqa khoom. Raws li pom nyob rau hauv daim duab 3c,d, photovoltaic tsis ntawm lub xov tooj ntawm tes, PCE, Jsc, Voc, thiab FF sib txawv nrog MoTe2 thickness. Nrog nce MoTe2 txheej tuab, Jsc maj mam nce mus txog thaum nws nce mus txog qhov saturation. Hloov pauv, Voc txo qis thaum MoTe2 thickness nce. Te Voc pib muaj kev txo qis sai thiab tom qab ntawd qhov txo qis yuav qeeb qeeb nrog qhov nce ntawm MoTe2 thickness. Qhov txo qis Voc tus nqi tuaj yeem raug xa mus rau qhov nce ntawm tus nqi thauj khoom rov ua dua nyob rau hauv cov txheej txheem thicker absorbing thiab mus rau kev ua haujlwm ntau ntxiv 44. Thaum lub absorbing txheej thickness yog me dua qhov ntev ntawm cov cab kuj diffusion, tus cab kuj recombination tus nqi txo qis, uas ua rau ib tug ntse nce nyob rau hauv voc. Ntawm qhov tod tes, tom qab qhov kev ncua deb ntau npaum li qhov ntev ntawm tus neeg nqa khoom diffusion, qhov txo qis Voc tshwm sim los ntawm cov cab kuj recombination nce. Tsis tas li ntawd, nws tsim nyog sau cia tias FF parameter muaj qhov tsis txaus ntseeg ntawm MoTe2 thickness. Yog li ntawd, raws li tau teev tseg hauv daim duab 3d, PCE pib ua rau muaj kev mob siab ntxiv hauv cov lus teb rau ob qho tib si Voc thiab JSC cov kev hloov pauv hauv cov thinner MoTe2 thicknesses thiab tom qab ntawd nce mus txog qhov siab tshaj plaws (~ 18.52 feem pua) ntawm MoTe2 thickness ntawm 25 nm. , thiab tom qab ntawd, nws poob qis thaum Jsc nce saturated.

Txhawm rau kom them nyiaj rau kev puas tsuaj ntawm cov khoom sib txuas uas tsis tshua muaj thiab siab bandgap, peb hloov spiro txheej nrog 60 nm rGO txheej los txhim kho cov neeg nqa khoom hloov mus. Arguably, graphene oxide (GO) thiab rGO tuaj yeem muab ntau yam txiaj ntsig rau PSCs, uas yog, kev txhim kho kev ruaj ntseg, hluav taws xob, thiab thermal conductivity45. Yog li ntawd, cov ntaub ntawv tau dav siv rau kev ua haujlwm sib txawv hauv PSCs xws li cov txheej txheem thauj khoom thauj, interlayers, thiabpob tshab conductive oxides. Ntawm no, GO txheej raug xaiv los ntxig rau hauv HTL vim nws cov qauv zoo sib xws nrog cov txheej uas nyob ib sab 'band npoo. Cov khoom siv hluav taws xob hluav taws xob hluav taws xob ntawm rGO tau txais los ntawm Ref46. Raws li tau piav qhia hauv daim duab 4a, kev siv hluav taws xob ntawm rGO raws li HTL tseem ceeb txhim kho ob qho tib si FF thiab Voc mus txog

{{0}}.89 thiab 0.928, ntsig txog, nyob rau hauv kev sib piv nrog multijunction PSC tsis muaj rGO txheej. Yog li ntawd, nws yields ib PCE siab li 20.32, nyob ib ncig ntawm 1.77 feem pua ​​loj dua cov multijunction PSC nrog spiro HTL. Kev txhim kho tseem ceeb ntawm photovoltaic kev ua tau zoo hauv rGO-based multijunction PSC tau mob siab rau kev thauj mus los tau zoo dua thiab kev sib raug zoo ntawm lub zog zoo dua qub, nrog rau kev txo qis hauv kev ua haujlwm ntau ntxiv vim qhov kev cia siab them rov qab txo qis ntawm qhov cuam tshuam.

Daim duab 4b piv cov photovoltaic kev ua tau zoo ntawm multijunction PSC nrog ntau HTLs xws li Spiro, PTAA, rGO, thiab CuS cov ntaub ntawv. Cov kev nkag tsis tau ntawm cov ntaub ntawv no yog tabulated nyob rau hauv Table 2. Lub rGO txheej ua raws li HTL zoo dua li lwm yam ntaub ntawv vim nws qhov siab mobility47, nrog rau ib tug zoo band sib dhos nrog MoTe2. Hloov pauv, CuS tsis zoo ua ke nrog MoTe2, ua rau txo VOC. Daim duab kos duab ntawm ntau qhov PSC nrog HTLs sib txawv yog qhia hauv daim duab 4c.

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